Method of fabricating multi layer devices on buried oxide layer substrates

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United States of America Patent

PATENT NO 7163826
APP PUB NO 20050079664A1
SERIAL NO

10719663

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Abstract

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A method for fabricating multi layer devices on a substrate with a buried oxide layer is disclosed. Multi layer microelectromechanical, microfluidic, and integrated circuit devices are fabricated on a substrate with layers of predetermined weak and strong bond regions with deconstructed layers of devices at or on the weak bond regions. The layers are then peeled and subsequently bonded to produce a multi layer microelectromechanical and microfluidic devices. An arbitrary number of layers can be bonded and stacked to create either microelectromechanical or microfluidic device or a hyrbid type of device.

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Patent Owner(s)

Patent OwnerAddress
REVEO INC6 SKYLINE DRIVE HAWTHORNE NY 10532

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Faris, Sadeg M Pleasantville, NY 238 7747

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