Method of preparing oxide crystal film/substrate composite and solution for use therein

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7160820
APP PUB NO 20040214450A1
SERIAL NO

10478063

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There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO--CuO--BaF.sub.2 system or a BaO--CuO--Ag--BaF.sub.2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850.degree. C.

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INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTERTOKYO 105-0004
FUJUKURA LTD5-1 KIBA 1-CHOME KOHTOH-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hirabayashi, Izumi Tokyo, JP 25 273
Iijima, Yasuhiro Tokyo, JP 37 458
Kim, Seok Beom Okayama, JP 6 12
Kurosaki, Haruhiko Nagoya, JP 1 2
Maeda, Toshihiko Kawasaki, JP 23 149
Muranaka, Koji Amagasaki, JP 14 152
Suga, Toshihiro Obu, JP 2 3
Watanabe, Tomonori Nagoya, JP 112 441
Yamada, Yasuji Matsue, JP 19 175
Yamada, Yutaka Nagoya, JP 164 2452
Yoshino, Hisashi Tokyo, JP 15 177

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges881427821409249163988958313411701 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0100200300400500600700800900100011001200130014001500

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