Process and device for the deposition of an at least partially crystalline silicium layer on a substrate
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United States of America Patent
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Jan 9, 2007
Grant Date -
May 20, 2004
app pub date -
Apr 12, 2002
filing date -
Apr 16, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate (24) is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location (12) where the source fluid is supplied and the substrate (24). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non-crystalline silicon atoms. The substrate (24) is exposed to both the source fluid and the auxiliary fluid.
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