Field effect transistor
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United States of America Patent
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Jan 2, 2007
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N/A
app pub date -
Jul 15, 2003
filing date -
Jul 16, 2002
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Abstract
A field-effect transistor includes a channel layer that is formed on a predetermined semiconductor layer and has an impurity concentration varying from a low value to a high value, and a source region and a drain region each having a bottom face above the predetermined semiconductor layer.
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