Process to reduce the dark current in semiconducting films
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United States of America Patent
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Dec 19, 2006
Grant Date -
May 5, 2005
app pub date -
Nov 4, 2003
filing date -
Nov 4, 2003
priority date (Note) -
Expired
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Abstract
A method of coating the joined crystals within a semiconductor conversion layer to reduce the dark current without compromising the sensitivity of the conversion layer is presented. A semiconductor conversion layer comprising a plurality of joined crystals and permeated by a polymer material and having microscopic voids is also presented.
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