Multi-beam semiconductor laser device
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United States of America Patent
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Dec 12, 2006
Grant Date -
Oct 6, 2005
app pub date -
May 19, 2005
filing date -
Jun 15, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 .mu.m. The distance B.sub.1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 .mu.m while the distance B.sub.2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 .mu.m.
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