Diode having vertical structure and method of manufacturing the same
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United States of America Patent
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Dec 12, 2006
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app pub date -
Oct 26, 2001
filing date -
Oct 26, 2001
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Abstract
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
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