Light emitting diode and method of the same
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United States of America Patent
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Dec 12, 2006
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app pub date -
Sep 24, 2004
filing date -
Apr 29, 2004
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Abstract
A light emitting diode and a method of the same are provided. The light emitting diode includes a light-emitting structure, a silicon substrate and a bonding layer. The light-emitting structure includes two semiconductor layers of different doped types. The light-emitting structure is capable of emitting light when a current passes through. The silicon substrate includes two zones of different doped types. The bonding layer is interposed between the light-emitting structure and the silicon substrate so that the semiconductor layer and the zone closest to the bonding layer are of different doped types.
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