Method for measuring impurity metal concentration
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United States of America Patent
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Nov 28, 2006
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app pub date -
Apr 26, 2005
filing date -
Apr 26, 2004
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Abstract
There is provided a method for calculating a more accurate metal impurity concentration contained in a silicon wafer by correcting measured values with a calibration based on a dependent relationship of the minority carrier diffusion length with a period of time elapsing from the activation to the actual measurement, an electric resistivity, and a temperature if there is such a relationship, in the measurement of the metal impurity concentration by utilizing the surface photovoltage. In the calibration step, such dependent relationship may be obtained by utilizing the metal impurity concentration measured by methods of different principles and actually measured values are corrected in light of the dependent relationship in the measuring step such that the metal impurity concentration is measured more accurately.
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