Semiconductor light emitting device and method of making the same
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United States of America Patent
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Nov 28, 2006
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Sep 16, 2004
filing date -
May 7, 2004
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Abstract
The invention provides a semiconductor light emitting device and the method of making it. The semiconductor light emitting device, according to the invention, includes an undoped In.sub.xGA.sub.yAl.sub.2N film, as an Ohmic layer, formed between a top-most semiconductor material layer and a transparent conductive oxide layer. Since the undoped film as a tunneling layer is very thin (.ltoreq.20 angstroms), the electric field across the tunneling layer, under forward bias, will make electron tunneling from valence band to conduction band, and return to the transparent conductive layer, A reasonably low and stable forward voltage of the semiconductor light emitting device according to the invention can be achieved.
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