Surface emitting semiconductor laser and manufacturing method thereof
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United States of America Patent
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Nov 28, 2006
Issued Date -
N/A
app pub date -
Jun 22, 2004
filing date -
Mar 27, 2001
priority date (Note) -
Expired
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Abstract
There is provided a surface emitting semiconductor laser satisfying a requirement of making a transverse mode stable and having characteristics of high output power, low resistance, high efficiency, and high speed response and a method for manufacturing the surface emitting semiconductor laser.Five holes are formed on the top surface of an upper multilayer reflection film formed in the shape of a post by the use of a focused ion beam (FIB) processing unit. One hole is formed on the surface of an upper multilayer reflection film corresponding to the center position of a square current injection region which is about 8 .mu.m square and the remaining four holes are formed at the corners of the square current injection region, for example, at the positions about 2 .mu.m square away from the one hole to produce four light emitting spots.
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