Cleaning gas and etching gas
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United States of America Patent
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Nov 21, 2006
Issued Date -
N/A
app pub date -
Jan 28, 2003
filing date -
Feb 12, 2002
priority date (Note) -
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Abstract
A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF.sub.4, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.
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