Semiconductor memory and its production process

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United States of America Patent

PATENT NO 7135726
SERIAL NO

09925952

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Abstract

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A semiconductor memory comprises: a fist conductivity type semiconductor substrate and one or more memory cells constituted of an island-like semiconductor layer, a charge storage layer and a control gate, the charge storage layer and the control gate being formed to entirely or partially encircle a sidewall of the island-like semiconductor layer, wherein at least one of said one or more memory cells is electrically insulated from the semiconductor substrate.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Endoh, Tetsuo Natori, JP 121 2763
Masuoka, Fujio Sendai-shi, Miyagi, JP 412 6771
Takeuchi, Noboru Sendai, JP 53 858
Tanigami, Takuji Fukuyama, JP 26 616
Yokoyama, Takashi Sendai, JP 220 2945

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