Low dielectric constant insulating film and method of forming the same
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United States of America Patent
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Nov 7, 2006
Grant Date -
Jan 6, 2005
app pub date -
May 18, 2004
filing date -
May 30, 2003
priority date (Note) -
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Abstract
The present invention relates to a method of forming a low dielectric constant insulating film. Its constitution has the steps of: (a) forming an insulating film containing Si--CH.sub.3 bond in the skeleton of Si--O--Si on a substrate; (b) irradiating ultraviolet ray to the insulating film in reduced-pressure atmosphere to break CH.sub.3 groups from Si--CH.sub.3 bond in the insulating film; and (c) ejecting the broken CH.sub.3 groups from the insulating film.
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