Methods and procedures for engineering of composite conductive films by atomic layer deposition

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United States of America Patent

PATENT NO 7129580
SERIAL NO

11216751

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Abstract

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A composite film comprised of three layers is formed by ALD on a substrate with a substrate interface surface. A first layer is coupled to the substrate interface surface. The first layer provides adhesion to the substrate interface surface and initiation of layer by layer ALD growth. A second layer is positioned between the first and third layers and provides a conducting diffusion barrier between the substrate and subsequent overlaying film. A third layer has a surface that is configured to provide adhesion and a texture template in preparation for a subsequent overlaying film. The composite engineered barrier structures are applied to interconnect, capacitor and transistor applications.

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Patent Owner(s)

Patent OwnerAddress
AIXTRON INC1139 KARLSTAD DRIVE SUNNYVALE CA 94089

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Londergan, Ana R Campbell, CA 17 277
Seidel, Thomas E Sunnyvale, CA 35 4640

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