Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof
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United States of America Patent
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Oct 17, 2006
Grant Date -
Oct 28, 2004
app pub date -
Jan 13, 2004
filing date -
Jan 15, 2003
priority date (Note) -
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Abstract
A contact structure for a PCM device is formed by an elongated formation having a longitudinal extension parallel to the upper surface of the body and an end face extending in a vertical plane. The end face is in contact with a bottom portion of an active region of chalcogenic material so that the dimensions of the contact area defined by the end face are determined by the thickness of the elongated formation and by the width thereof.
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