Method to fabricate dual metal CMOS devices
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United States of America Patent
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Oct 17, 2006
Grant Date -
Jun 3, 2004
app pub date -
Jun 19, 2003
filing date -
Dec 3, 2002
priority date (Note) -
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Abstract
The present invention relates generally to barrier layers in transistor gate stacks in integrated circuits, and to processes for forming such gate stacks.
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