Integrating metal layers with ultra low-K dielectrics
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United States of America Patent
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Oct 10, 2006
Grant Date -
Dec 30, 2004
app pub date -
Sep 18, 2001
filing date -
Sep 18, 2000
priority date (Note) -
Expired
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Abstract
In forming a layer of a semiconductor wafer, a dielectric layer is deposited on the semiconductor wafer. The dielectric layer includes material having a low dielectric constant. Recessed and non-recessed areas are formed in the dielectric layer. A metal layer is deposited on the dielectric layer to fill the recessed areas and cover the non-recessed areas. The metal layer is then electropolished to remove the metal layer covering the non-recessed areas while maintaining the metal layer in the recessed areas.
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