Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate
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United States of America Patent
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Oct 3, 2006
Grant Date -
Dec 9, 2004
app pub date -
Oct 14, 2003
filing date -
Jun 6, 2003
priority date (Note) -
Expired
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Abstract
A method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate. The method includes providing an initial structure that includes a useful layer having a front face on a support substrate. Atomic species are implanted into the useful layer to a controlled mean implantation depth to form a zone of weakness within the useful layer that defines first and second useful layers. Next, a stiffening substrate is bonded to the front face of the initial structure. The first useful layer is then detached from the second useful layer along the zone of weakness to obtain a pair of semiconductor structures with a first structure including the stiffening substrate and the first useful layer and a second structure including the support substrate and the second useful layer. The structures obtained can be used in the fields of electronics, optoelectronics or optics.
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