Semiconductor capacitor with praseodymium oxide as dielectric
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United States of America Patent
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Sep 26, 2006
Grant Date -
Aug 4, 2005
app pub date -
Apr 23, 2003
filing date -
Apr 23, 2002
priority date (Note) -
Expired
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Abstract
In accordance with the invention there is provided a semiconductor capacitor having a first semiconductor layer which forms a first capacitor electrode and which includes silicon, a second capacitor electrode and a capacitor dielectric including praseodymium oxide between the capacitor electrodes, in which provided between the capacitor dielectric including praseodymium oxide and at least the first semiconductor layer including silicon is a first thin intermediate layer representing a diffusion barrier for oxygen. In particular the thin intermediate layer can include oxynitride.
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