Passivation of material using ultra-fast pulsed laser
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United States of America Patent
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Sep 26, 2006
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N/A
app pub date -
Sep 11, 2000
filing date -
Sep 10, 1999
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Expired
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Abstract
The surface of a semiconductor material, e.g., gallium arsenide, is passivated by irradiating the surface with ultra-short laser pulses, until a stable passive surface is achieved. The passive surface so prepared is devoid of a superficial oxide layer.
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