Method of producing a high resistivity SIMOX silicon substrate
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United States of America Patent
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Sep 26, 2006
Grant Date -
Nov 11, 2004
app pub date -
May 9, 2003
filing date -
May 9, 2003
priority date (Note) -
Expired
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Abstract
The present invention provides a method for generating silicon-on-insulator (SOI) wafers that exhibit a high electrical resistivity. In one embodiment of a method according to the teachings of the invention, a SIMOX process is sandwiched between two Full Oxygen Precipitation (FOP) cycles that sequester interstitial oxygen present in the substrate in the form of oxide precipitates, thereby enhancing the electrical resistivity of the susbtrate.
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