Method of forming a liquid crystal display
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United States of America Patent
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Sep 26, 2006
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app pub date -
Oct 2, 2003
filing date -
Oct 2, 2003
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Abstract
An active layer of a P-type low temperature polysilicon thin film transistor and a bottom electrode of a storage capacitor are first formed. Then, a P-type source/drain is formed and the bottom electrode is doped with dopants. A gate insulator, a gate electrode, a capacitor dielectric, and a top electrode are thereafter formed. Finally, a source interconnect, a drain interconnect, and a pixel electrode of the liquid crystal display are formed.
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