Electronic shutter using buried layers and active pixel sensor and array employing same
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United States of America Patent
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Sep 19, 2006
Grant Date -
N/A
app pub date -
Aug 13, 2002
filing date -
Aug 13, 2002
priority date (Note) -
Expired
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Abstract
An electronic shutter switching transistor for a CMOS electronic is formed in a semiconductor substrate of a first conductivity type. The transistor comprises a pair of spaced apart doped regions of a second conductivity type opposite the first conductivity type disposed in the semiconductor substrate forming source/drain regions. A gate is disposed above and insulated from the semiconductor substrate and is self aligned with the pair of spaced apart doped regions. A well of the second conductivity type laterally surrounds the pair of spaced apart doped regions and extends deeper into the substrate than the doped regions. A buried layer of the second conductivity type underlies and is in contact with the well.
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