Semiconductor device having trench capacitor and method for fabricating the same
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United States of America Patent
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-
Sep 19, 2006
Grant Date -
Jun 26, 2003
app pub date -
Dec 23, 2002
filing date -
Dec 24, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device and a method for fabricating the same. The device comprises a silicon substrate having a conductive well; a trench formed in the conductive well; a plate electrode formed on the sidewall of the trench; a capacitor insulating film and a storage node electrode; a first storage node connector formed on the storage node electrode; an insulating film formed on the first storage node connector; a silicon layer formed on the entire structure; word lines formed on the silicon layer; source and drain regions formed in the silicon layer; a contact hole, formed in the silicon layer and the insulating film, such that the first storage node connector and the source region are exposed; and a second storage node connector, formed in the contact hole, such that the source region and the first storage node connector are connected to each other.
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