Epitaxial SiO.sub.x barrier/insulation layer
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United States of America Patent
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Sep 12, 2006
Grant Date -
Jan 5, 2006
app pub date -
Jun 14, 2001
filing date -
Nov 10, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for producing an insulating or barrier layer (FIG. 1B), useful for semiconductor devices, comprises depositing a layer of silicon and at least one additional element on a silicon substrate whereby said deposited layer is substantially free of defects such that epitaxial silicon substantially free of defects can be deposited on said deposited layer. Alternatively, a monolayer of one or more elements, preferably comprising oxygen, is absorbed on a silicon substrate. A plurality of insulating layers sandwiched between epitaxial silicon forms a barrier composite. Semiconductor devices are disclosed which comprise said barrier composite.
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