Memory elements using organic active layer
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United States of America Patent
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Sep 5, 2006
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app pub date -
Dec 23, 2004
filing date -
Dec 23, 2004
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Abstract
A memory element includes a first electrode, a passive layer on and in contact with the first electrode, a polyfluorene active layer on and in contact with the active layer, and a second electrode on and in contact with the polyfluorene active layer. The chemical structure of the polyfluorene active layer may be altered to take different forms, each providing a different memory element operating characteristic.
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