Method and apparatus for thermally treating disk-shaped substrates
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United States of America Patent
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Aug 29, 2006
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Nov 28, 2003
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Dec 23, 2002
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Abstract
A method and apparatus for thermally treating disk-shaped substrates, especially semiconductor wafers, in a rapid heating unit having at least one first radiation source, which is spaced from a given substrate for heating the substrate. The substrate is heated in a heating phase and is cooled in a cooling phase that follows the heating phase. During at least a portion of the cooling phase, the substrate is supported at a distance of from 50 .mu.m to 1 mm via ultrasonic levitation from a heating/cooling plate. For example by means of an ultrasonic electrode.
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