Smooth thin film layers produced by low temperature hydrogen ion cut
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United States of America Patent
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Aug 22, 2006
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app pub date -
May 5, 2003
filing date -
Dec 28, 2000
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Abstract
A method for producing wafer splitting from ion implantation into silicon after low temperature direct bonding with surface roughness that is .about.1 nm (RMS). This result is an order of magnitude smoother than the previous work (.about.10 nm RMS). The key improvement in this work is the use of a low temperature bond resulting in a strong bond before the material is cut. The smooth as-split surfaces produced using a low temperature bond are very important for creation of very thin (<50 nm) silicon-on-insulator (SOI), three-dimensional bonded structures and nanostructures that are split after processing.
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