Method of forming deep trench capacitors
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United States of America Patent
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Aug 22, 2006
Grant Date -
Apr 14, 2005
app pub date -
Oct 13, 2004
filing date -
Oct 14, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of forming a trench capacitor is disclosed. After completion of the bottom electrode of the capacitor, a collar dielectric layer is directly formed on the sidewall of the deep trench using self-starved atomic layer chemical vapor deposition (self-starved ALCVD). Then, a high dielectric constant (high k) dielectric layer is formed overlying the collar dielectric and the bottom portion of the deep trench using atomic layer chemical vapor deposition (ALCVD). Thereafter, a conductive layer is filled into the deep trench and recessed to a predetermined depth. A portion of the dielectric layer and the high dielectric constant (high k) layer at the top of the deep trench are removed to complete the fabrication of the deep trench capacitor.
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