Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates
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United States of America Patent
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Aug 22, 2006
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app pub date -
Oct 27, 2003
filing date -
Apr 26, 2001
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Abstract
During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.
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