Local dry etching method
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United States of America Patent
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Aug 22, 2006
Grant Date -
Jul 22, 2004
app pub date -
Jul 22, 2003
filing date -
Jul 22, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
This invention provides a local dry etching method comprising the step of removing an oxide film formed on the surface of a semiconductor water before unevenness on the semiconductor wafer is removed by scanning the surface of the semiconductor wafer at a controlled relative speed with a nozzle for applying a flow of activated species gas to the surface of the semiconductor wafer. The removal of this oxide film is carried out by widening an etching profile and a scan pitch and making the nozzle speed constant, and then flattening is carried out in the same local dry etching apparatus. For flattening, the nozzle speed is changed for each area according to initial unevenness.
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