Stiction resistant release process
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United States of America Patent
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Aug 8, 2006
Grant Date -
Apr 7, 2005
app pub date -
Oct 7, 2003
filing date -
Oct 7, 2003
priority date (Note) -
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Abstract
A method of releasing a micro-electronic device formed over an insulator of a silicon-on-insulator (SOI) substrate. In one embodiment, the release method includes etching at least a portion of the insulator to separate the micro-electronic device from the SOI substrate, rinsing at least the micro-electronic device, exposing at least the micro-electronic device to a micro-sphere solution and removing the micro-electronic device from the SOI substrate. The release method may also include exposing the micro-electronic device to an etching plasma to substantially expunge the micro-sphere solution.
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