Semiconductor device and manufacturing method of the same
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United States of America Patent
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Aug 1, 2006
Grant Date -
Mar 25, 2004
app pub date -
Jun 23, 2003
filing date -
Jun 24, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
To suppress defects occurred in a semiconductor substrate, a semiconductor device is constituted by having: the semiconductor substrate; an element isolating region having a trench formed in the semiconductor substrate and an embedding insulating film which is embedded into the trench; an active region formed adjacent to the element isolating region, in which a gate insulating film is formed and a gate electrode is formed on the gate insulating film; and a region formed in such a manner that at least a portion of the gate electrode is positioned on the element isolating region, and a first edge surface of an upper side of the embedding insulating film in a first element isolating region where the gate electrode is positioned is located above a second edge surface of the embedding insulating film in a second element isolating region where the gate electrode film is not positioned.
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