Semiconductor photodetection device and fabrication process thereof
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United States of America Patent
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Jul 25, 2006
Grant Date -
Dec 6, 2001
app pub date -
Jun 5, 2001
filing date -
Jun 6, 2000
priority date (Note) -
Expired
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Abstract
A semiconductor photodetection device includes a photodetection layer formed of an alternate and repetitive stacking of an optical absorption layer accumulating therein a compressive strain and a stress-compensating layer accumulating therein a compensating tensile strain, wherein the optical absorption layer has a thickness larger than a thickness of the stress-compensating layer.
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