Method of fabricating a p-type ohmic electrode in gallium nitride based optical device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 25, 2006
Grant Date -
Oct 2, 2003
app pub date -
Mar 19, 2003
filing date -
Mar 20, 2002
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A p-type ohmic electrode in a gallium nitride based(GaN based) optical device and a fabrication method thereof. The p-type ohmic electrode in a GaN based optical device is fabricated using a rutile structure transition metal layer, such as an Ru, Ir or Os layer, or an oxide layer thereof, or using a double layer comprised of an Ru layer as a base layer and an Ni layer, an ITO layer or an AuO layer on the Ru layer. Thus, the p-type ohmic electrode is good in light transmittance and is thermally stable while having low contact resistance with the p-GaN layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully