Capacitor of semiconductor device and method for forming the same
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United States of America Patent
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Jul 11, 2006
Grant Date -
Jun 22, 2006
app pub date -
Feb 28, 2005
filing date -
Dec 16, 2004
priority date (Note) -
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Abstract
In a method for forming a capacitor for use in a semiconductor device, a nitride film for stopping etching, a first mold oxide film, an insulating film, deposited on a substrate are etched to expose the respective storage node contacts and thereby to form a plurality of contact holes arrayed in a zigzag pattern for storage electrodes. A sacrificial oxide film is deposited by burying the contact holes for storage electrodes in a thickness such that an outer portion of the storage electrodes having a relatively short interval is completely buried while an outer portion the storage electrodes having a relatively long interval is not completely buried. The sacrificial oxide film and the insulation film are etched back to form a support network enclosing the respective storage electrodes and interconnected to each other.
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