Field effect transistor with etched-back gate dielectric
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United States of America Patent
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Jul 4, 2006
Grant Date -
Jun 16, 2005
app pub date -
Dec 10, 2003
filing date -
Dec 10, 2003
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Abstract
A method for making an ultrathin high-k gate dielectric for use in a field effect transistor is provided. The method involves depositing a high-k gate dielectric material on a substrate and forming an ultrathin high-k dielectric by performing a thinning process on the high-k gate dielectric material. The process used to thin the high-k dielectric material can include at least one of any number of processes including wet etching, dry etching (including gas cluster ion beam (GCIB) processing), and hybrid damage/wet etching. In addition to the above, the present invention relates to an ultrathin high-k gate dielectric made for use in a field-effect transistor made by the above method.
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