Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
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United States of America Patent
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Jun 13, 2006
Grant Date -
Feb 24, 2005
app pub date -
Oct 31, 2002
filing date -
Nov 5, 2001
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Abstract
Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the formula: M.sup.1M.sup.2O.sub.3 (ZnO).sub.m, wherein M.sup.1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M.sup.2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.
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