Method of manufacturing semiconductor device
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United States of America Patent
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Jun 13, 2006
Grant Date -
Jan 20, 2005
app pub date -
Dec 10, 2003
filing date -
Jul 18, 2003
priority date (Note) -
Expired
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Abstract
The present invention is provided to manufacture a semiconductor device capable of preventing loss of dopants due to external diffusion thereof from a junction area by forming a cobalt mono-silicide film through a first RTP process, implanting ions not serving as a donor or an acceptor with a low energy and a low dose to make the film amorphous, and then forming a cobalt silicide film through a second RTP process.
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