Method of manufacturing a semiconductor device
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United States of America Patent
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Jun 13, 2006
Grant Date -
Jun 17, 2004
app pub date -
Dec 10, 2003
filing date -
Dec 14, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of manufacturing a semiconductor device is disclosed wherein a tungsten single atomic layer is deposited in a contact or via hole of a silicon substrate. A tungsten nitride (WN) layer is formed by plasma processing the tungsten single atomic layer using an atomic layer deposition process, which is repeated to form the tungsten nitride layer having a desired thickness as the barrier metal. A tungsten layer is then deposited on the semiconductor substrate to fill the contact hole. The tungsten nitride layer and the tungsten layer are in-situ deposited in a same reaction chamber for tungsten process. Accordingly, the step coverage of the tungsten nitride layer, is improved, thus reducing the contact defects of the fine contact hole, which has a high aspect ratio.
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