Nitride semiconductor laser device and manufacturing method thereof
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United States of America Patent
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Jun 6, 2006
Grant Date -
Dec 2, 2004
app pub date -
Oct 28, 2002
filing date -
Oct 26, 2001
priority date (Note) -
Expired
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Abstract
The object of this invention is to provide a high-output type nitride semiconductor laser device comprising a pair of end faces of a resonator.The nitride semiconductor laser device comprises an n-type nitride semiconductor layer or layers, a p-type nitride semiconductor layer or layers and a resonator, provided with an active layer comprising nitride semiconductor containing In therebetween, wherein at least light emitting end face of the resonator is covered with an end face film of single crystal Al.sub.xGa.sub.1-xN (0.ltoreq.x.ltoreq.1) formed at a low temperature not causing damage to the active layer comprising nitride semiconductor containing In.
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