Method of etching cavities having different aspect ratios
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United States of America Patent
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May 16, 2006
Grant Date -
Feb 2, 2006
app pub date -
Oct 28, 2004
filing date -
Jul 30, 2004
priority date (Note) -
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Abstract
A method of etching cavities having different aspect ratios. An etching stop layer is formed on the bottom surface of a substrate, and a mask pattern is formed on the top surface of the substrate. The mask pattern includes a plurality of sacrificial patterns positioned on both a first cavity predetermined region and a second cavity predetermined region. Then, an etching process is performed to remove the substrate not covered by the mask layer. Then, the etching stop layer is removed, as well as the sacrificial patterns and the substrate covered by the sacrificial patterns.
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