Forming a photodiode to include a superlattice exclusion layer
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United States of America Patent
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May 16, 2006
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app pub date -
Sep 24, 2004
filing date -
Jan 30, 2003
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Abstract
A photosensitive diode has superlattice exclusion region formed from a stack of first and second layers. The first layers are penetrated by minority carriers using quantum mechanical tunneling and reduce minority carrier mobility. The second layers have a sufficiently low bandgap that the tunneling minority carriers can reach an active region of the diode. The process of successively forming first and second layers is repeated until the exclusion region is at least three times the minority carrier diffusion length.
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