Phase change resistor cell and nonvolatile memory device using the same
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United States of America Patent
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May 2, 2006
Grant Date -
Jun 16, 2005
app pub date -
Jun 30, 2004
filing date -
Dec 13, 2003
priority date (Note) -
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Abstract
A nonvolatile memory device features a phase change resistor cell. More specifically, a phase change resistor and a hybrid switch which does not require an additional gate control signal are used to embody rapid nonvolatile SRAM characteristics. In the nonvolatile memory device, a cell plate is connected to a top electrode of a nonvolatile resistor memory device whose resistance state is changed by current values, and the hybrid switch is connected between a flip-flop and a bottom electrode of the nonvolatile resistor memory device, thereby improving characteristics of the rapid nonvolatile memory.
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