Method of manufacturing a semiconductor device without oxidized copper layer
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United States of America Patent
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May 2, 2006
Grant Date -
Jun 24, 2004
app pub date -
Dec 12, 2003
filing date -
Dec 16, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device which effectively reduces copper oxide layers on copper conductive lines is disclosed. The method includes forming a first insulating layer on a semiconductor substrate; forming a first conductive line by depositing a conductive material on the first insulating layer and selectively patterning the conductive material. A second insulating layer is deposited on top of the substrate including on the first conductive line. A via hole is formed by selectively patterning the second insulating layer to expose a certain portion of the first conductive line. A natural oxide layer is removed by plasma-processing the natural oxide layer using H.sub.2+CO gas.
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