Monolithically integrated high power laser optical device
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United States of America Patent
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Apr 25, 2006
Grant Date -
Nov 13, 2003
app pub date -
May 10, 2002
filing date -
May 10, 2002
priority date (Note) -
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Abstract
An optical device, including a monolithically integrated diode laser and semiconductor optical amplifier, that has reduced linewidth and improved side mode suppression for a given output power target. In a preferred embodiment, the diode laser is detuned from a gain peak wavelength to an emission wavelength. The semiconductor optical amplifier has an active region that is bandgap shifted to move its gain peak towards the emission wavelength of the laser diode, thus reducing its linewidth enhancement factor. The diode laser is preferably either a gain-coupled or index-coupled distributed feedback laser. The bandgap shift can be effected by known bandgap shifting methods, such as ion implantation, dielectric cap disordering, and laser induced disordering.
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