Method for monitoring ion implant doses
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United States of America Patent
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Apr 18, 2006
Grant Date -
Dec 22, 2005
app pub date -
Jun 22, 2004
filing date -
Jun 22, 2004
priority date (Note) -
Expired
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Abstract
Both the sensitivity and the reproducibility of processes for measuring low density ion implant doses near a semiconductor surface have been improved by first forming a thermal oxide layer on the surface and then adjusting the implant profile so that it peaks at the semiconductor-oxide interface. Additionally, variations in the initial wafer surface condition have been minimized by controlling the charging dose and sequence prior to performing the measurements.
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