EPIR device and semiconductor devices utilizing the same
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United States of America Patent
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Apr 11, 2006
Grant Date -
Feb 24, 2005
app pub date -
Mar 2, 2004
filing date -
Mar 7, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
There is provided an EPIR device which is excellent in mass productivity and high in practical utility. The EPIR device includes a lower electrode layer, a CMR thin film layer and an upper electrode layer which are laminated in this order on any of various substrates. A Pt polycrystal thin film 10 forming the lower electrode layer includes columnar Pt crystal grains 10A, 10B, 10C, . . . and over 90% of these crystal grains is oriented to a (1 1 1) face. Columnar PCMO crystal grain groups 20A, 20B, 20C, . . . are respectively locally grown epitaxially on the respective outermost surfaces of the Pt crystal grains 10A, 10B, 10C, . . . . Then, the crystal faces of the crystal grains included in the PCMO crystal grain groups 20A, 20B, 20C, . . . and vertical in the substrate surface normal direction are any one of (1 0 0)p, (1 1 0)p and (1 1 1)p planes.
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