Method of manufacturing semiconductor device using thermal treatment that features lower speed wafer rotation at low temperatures and higher speed wafer rotation at high temperatures
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United States of America Patent
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Apr 11, 2006
Grant Date -
Aug 5, 2004
app pub date -
Jan 13, 2004
filing date -
Jan 31, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A technique capable of preventing breakage of a semiconductor wafer in a single-wafer RTP apparatus is provided. Open-loop control is made in a temperature rising process, in which the temperature of the semiconductor wafer is 500° C. or lower, and a revolution speed of the semiconductor wafer is relatively reduced to 100 rpm or lower even if the bowing of the semiconductor wafer occurs. Therefore, a centrifugal force exerted on the semiconductor wafer is reduced, whereby it becomes possible to prevent the semiconductor wafer from dropping from a stage of the single-wafer RTP apparatus. Additionally, closed-loop control is made in the temperature rising process, in which the temperature of the semiconductor wafer is higher than 500° C., and in a main treatment process, and further the revolution speed of the semiconductor wafer is relatively increased. By so doing, the almost uniform in-plane temperature of the semiconductor wafer can be achieved and the bowing of the semiconductor wafer can be prevented.
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